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The present invention generally relates to the field of integrated circuit fabrication and, more particularly, to a method of forming raised geometry and electrically alterable material (ELAM) self-aligned contact (SAC) implants for integrated circuit memory, logic, and analog circuitry.
2. Description of the Relevant Art
Self-aligned contact (SAC) devices are integrated into semiconductor circuits to allow for the formation of more complex conductor interconnect patterns. As is known in the art, SAC devices generally include a doped region (an N+ region or a P+ region) in a silicon substrate, a polysilicon conductor, and a dielectric material (typically SiO.sub.2) separating the conductor from the doped region. As is also known, polysilicon is a material that can be doped to form a P-type and an N-type region. The area of silicon adjacent to the N+ doped region is N-type, and, hence, the polysilicon conductor can be connected through a conventional contact to an N-type region. The area of silicon adjacent to the P+ doped region is P-type, and, hence, the polysilicon conductor cannot be directly contacted to the P-type substrate but can be contacted to an N+ doped region formed in the P-type silicon. The N+ and P+ doped regions, therefore, act